Engineering Design of Integrated III-V/SiN Quantum-well and Quantum-dot Lasers

Emad Alkhazraji (1) , Weng W Chow (2) , Frederic Grillot (3, 4, 5) , John E Bowers (6) , Scott E Madaras (6) , Michael Gehl (6) , Erik Skogen (6) , Yating Wan (1)

1 KAUST - King Abdullah University of Science and Technology [Saudi Arabia]
2 SNL - Sandia National Laboratories [Albuquerque]
3 GTO - Télécommunications Optiques
4 COMELEC - Département Communications & Electronique
5 The University of New Mexico [Albuquerque]
6 ECE-UCSB - Department of Electrical and Computer Engineering [Santa Barbara]

Spectrally-pure lasers are paramount in various fields. Progression to Hz-level lasing linewidth in III-V/SiN lasers with quantum-dot active regions is predicted here. Using parametric studies, one can produce timely results in engineering designs.

Mots clés: Engineering Design; Integrated III-V; SiN Quantum-well; Quantum dot lasers

Domaines: Physique [physics]

Emad Alkhazraji, Weng W Chow, Frederic Grillot, John E Bowers, Scott E Madaras, et al.. Engineering Design of Integrated III-V/SiN Quantum-well and Quantum-dot Lasers. 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2023, Munich, Germany. ⟨hal-04559825⟩